T-SiCSBD-A1200

CRRC Times Electric 1200V SiC Schottky Diode - AEC-Q101 qualified Silicon Carbide Schottky Barrier Diode with zero reverse recovery for ultimate efficiency in EV power electronics applications.

1200V
Voltage Rating
40A
Current Rating
0ns
Reverse Recovery

Zero Reverse Recovery

SiC Schottky technology provides zero reverse recovery losses, enabling maximum efficiency and reduced EMI in high-frequency applications.

Zero Qrr No Recovery High Efficiency
🌡️

High Temperature Operation

Operating up to 175°C junction temperature with excellent thermal stability and minimal temperature coefficient for automotive applications.

175°C Tj Max AEC-Q101 Thermal Stable
📏

Compact Package Design

Small footprint automotive-grade package optimized for space-constrained EV power electronics with excellent power density.

Small Footprint Automotive Grade Power Dense

Product Overview

The T-SiCSBD-A1200 is a high-performance SiC Schottky Diode designed to replace traditional silicon diodes in high-frequency automotive power circuits. Its key advantage is zero reverse recovery current, which dramatically reduces the switching losses of the accompanying MOSFET or IGBT. This leads to higher efficiency, lower operating temperatures, and greater power density in applications like EV on-board chargers (OBC) and auxiliary DC-DC converters.

Key Features

  • AEC-Q101 Qualified: Meets stringent automotive reliability standards
  • Zero Reverse Recovery Current: Eliminates Qrr losses for maximum efficiency
  • High-Speed Switching: Fast switching with minimal turn-off delay
  • Temperature-Independent Switching: Consistent performance across operating range
  • Low Forward Voltage Drop: Minimizes conduction losses
  • Robust Design: Exceptional avalanche and surge current capability

Technology Advantages

Silicon Carbide Schottky technology offers significant advantages over traditional Silicon devices:

  • No reverse recovery charge (Qrr = 0) for lossless switching
  • 3x higher operating temperature capability (up to 175°C)
  • 10x faster switching speeds for higher frequency operation
  • Superior thermal stability and performance consistency

Technical Specifications

Electrical Characteristics

Parameter Symbol Min Typ Max Unit Conditions
Reverse Voltage VR 1200 - - V IR = 10μA
Forward Current IF - 40 - A TC = 25°C
Forward Voltage Drop VF - 1.8 2.2 V IF = 20A, TJ = 25°C
Reverse Recovery Charge Qrr - 0 0 nC IF = 20A, dI/dt = 100A/μs
Reverse Recovery Time Trr - 20 - ns IF = 20A, dI/dt = 100A/μs

Thermal Characteristics

Parameter Symbol Value Unit Notes
Junction Temperature TJ -55 to +175 °C Operating range
Storage Temperature TSTG -55 to +175 °C Non-operating
Thermal Resistance (Junction to Case) RthJC 0.3 °C/W Per diode

Package Information

  • Package Type: TO-247-3L standard package
  • Dimensions: 20.9mm x 15.9mm x 5.0mm
  • Weight: 6.5g (typical)
  • Terminals: Standard through-hole leads
  • Isolation Voltage: 2500V RMS (1 minute)

Target Applications

🚗 EV Onboard Charger
🔌 EV DC-DC Converter
⚡ EV Main Inverter
🏭 Industrial SMPS
☀️ Solar Inverters
🏠 UPS Systems
🚄 Rail Traction
💨 Wind Power Converters

Electric Vehicle Applications

The T-SiCSBD-A1200 is specifically optimized for electric vehicle power electronics, where efficiency and power density are critical:

  • Onboard Charger (OBC): Rectifier diodes for AC-DC conversion with >95% efficiency
  • Auxiliary DC-DC Converter: High-frequency rectification for 12V/48V systems
  • Main Traction Inverter: Complementary diodes for IGBT switching
  • Bidirectional Converter: Enables vehicle-to-grid (V2G) functionality

Industrial Applications

Superior performance in demanding industrial environments:

  • Switched-Mode Power Supplies: High-frequency rectification in server PSUs
  • Renewable Energy: Solar and wind power conversion systems
  • UPS Systems: Uninterruptible power supplies for critical applications
  • Welding Equipment: High-frequency inverter welding systems

Design Considerations

  • Thermal management: Ensure adequate heatsinking for rated current
  • PCB layout: Minimize parasitic inductance for fast switching
  • Parallel operation: Capable of parallel connection for higher current
  • EMI considerations: Fast switching requires careful PCB layout

Technical Documentation

📄 Product Documentation

Access complete technical documentation for the T-SiCSBD-A1200

🔧 Design Tools

Simulation models and design assistance tools

📋 Quality & Compliance

Certification documents and quality reports

Need Additional Support?

Our Field Application Engineers are ready to assist with your design:

  • Custom simulation models and analysis
  • Application-specific design guidance
  • Thermal management optimization
  • EMI/EMC compliance assistance
Contact FAE Team