800V EV Main Inverter Solution

System Architecture

Power Electronics Architecture

The 800V main inverter solution employs a three-phase, two-level voltage source inverter (VSI) topology optimized for SiC MOSFET operation:

Inverter Topology

• Configuration: Three-phase, six-switch topology
• Switching Frequency: 20-50 kHz (adjustable based on application)
• Control Method: Space Vector PWM (SVPWM) for optimal harmonic performance
• Dead Time: Optimized for SiC characteristics (<200ns typical)

Thermal Management

• Cooling Method: Liquid cooling with optimized cold plate design
• Thermal Interface: High-performance thermal interface materials
• Temperature Monitoring: Integrated temperature sensors for each module
• Derating Strategy: Intelligent power derating based on thermal conditions

Control System Architecture

Component	Function	Key Features
Main Controller	System control and coordination	Automotive-grade MCU, functional safety
Gate Drivers	SiC MOSFET gate control	Isolated drivers, fault protection
Current Sensors	Phase current measurement	High accuracy, low latency
Voltage Sensors	DC bus voltage monitoring	High voltage isolation
Position Sensor	Motor rotor position	Resolver or encoder interface

Safety and Protection

• Functional Safety: ASIL-D compliance for critical functions
• Overcurrent Protection: Hardware and software current limiting
• Overvoltage Protection: Active clamping and monitoring
• Thermal Protection: Multi-level thermal management
• Isolation Monitoring: Continuous insulation resistance monitoring
• Fault Diagnostics: Comprehensive fault detection and reporting

EMC and EMI Considerations

• Optimized PCB layout for minimal loop inductance
• Integrated EMI filter design
• Shielding strategy for high-frequency noise suppression
• Common-mode current management
• Compliance with automotive EMC standards (CISPR 25)

Key Components

Primary Power Modules

Bill of Materials (BOM)

Component	Part Number	Quantity	Function	Key Specifications
SiC MOSFET Module	T-SiC-M1200	6	Main switching devices	1200V, 50A, 16mΩ
SiC Diode	T-SiCSBD-A1200	6	Anti-parallel diodes	1200V, 40A, Zero Qrr
Gate Driver IC	Recommended Partner	6	Gate drive control	Isolated, 15V/-5V output
DC Link Capacitor	Film Capacitor Bank	1	Energy storage	1000V, 500μF, Low ESR
Current Sensor	Hall Effect Sensor	3	Phase current measurement	±300A, 1% accuracy
Cooling System	Liquid Cold Plate	1	Thermal management	Optimized for SiC modules

Supporting Components

• EMI Filter: Common-mode and differential-mode filtering
• DC Link Precharge: Soft-start circuitry for capacitor charging
• Contactors: High-voltage isolation switches
• Fuses: Semiconductor protection fuses
• Busbars: Low-inductance power distribution
• Enclosure: IP67 rated housing with EMI shielding

Design Guidelines

• Minimize parasitic inductance in power loop (<10nH)
• Use symmetrical gate drive circuits for all phases
• Implement temperature balancing across modules
• Ensure adequate isolation distances (>8mm creepage)
• Design for worst-case operating conditions

Performance Specifications

System Performance

Parameter	Value	Units	Conditions
Maximum Power	200	kW	Continuous at 25°C coolant
Peak Power	400	kW	30 seconds maximum
DC Bus Voltage	400-800	V	Operating range
Output Frequency	0-300	Hz	Motor dependent
Efficiency	>98	%	Rated power, 50°C
Power Density	15	kW/L	Including cooling
Switching Frequency	20-50	kHz	Configurable

Efficiency Characteristics

The SiC-based solution delivers superior efficiency across the entire operating range:

• Peak Efficiency: >98.5% at rated power
• Low Load Efficiency: >95% at 10% rated power
• Efficiency Map: High efficiency across wide speed/torque range
• Temperature Coefficient: <0.1%/°C efficiency degradation

Thermal Performance

Parameter	Value	Units	Notes
Junction Temperature	-40 to +175	°C	SiC MOSFET operating range
Coolant Temperature	-20 to +70	°C	System operating range
Thermal Resistance	0.08	K/W	Junction to coolant
Heat Dissipation	3-4	kW	At rated power

Dynamic Performance

• Torque Response: <1ms for step changes
• Speed Regulation: ±0.1% at steady state
• Current Control Bandwidth: >1kHz
• Overload Capability: 200% for 30 seconds
• Regenerative Braking: Full power capability

Reliability Metrics

• MTBF: >100,000 hours (automotive duty cycle)
• Operating Life: 15+ years typical
• Power Cycling: >500,000 cycles (ΔTj = 100K)
• Vibration Resistance: 20g peak (5-2000Hz)
• Shock Resistance: 50g, 11ms duration

Environmental Compliance

• Protection Rating: IP67 (dust and water resistant)
• Operating Altitude: Up to 3000m above sea level
• Humidity: 95% RH non-condensing
• Salt Spray: 96 hours (ISO 9227)
• RoHS Compliance: Lead-free and environmentally friendly

Design Resources & Support

Engineering Support Services

Training & Certification

• SiC Technology Training: Comprehensive courses on SiC device characteristics
• Design Workshops: Hands-on workshops for inverter design
• Safety Training: High-voltage safety and functional safety training
• Certification Programs: Professional certification in EV powertrain design

Development Timeline

Phase	Duration	Key Activities	Deliverables
Requirements Definition	2-4 weeks	System specifications, performance targets	Requirements document
Design & Simulation	6-8 weeks	Circuit design, thermal simulation, EMC analysis	Design package, simulation results
Prototyping	8-12 weeks	PCB fabrication, assembly, initial testing	Functional prototype
Validation & Testing	6-10 weeks	Performance testing, EMC testing, reliability testing	Test reports, certification
Production Support	Ongoing	Manufacturing support, quality assurance	Production documentation

Get Started

Ready to implement the 800V EV main inverter solution in your next project?

Schedule Consultation Access Technical Support