T-SiC-M1200

CRRC Times Electric 1200V SiC MOSFET Module - Advanced Silicon Carbide technology delivering superior switching performance and reliability for next-generation electric vehicle powertrains and high-frequency industrial applications.

1200V
Voltage Rating
50A
Current Rating
16mΩ
RDS(on) Typical
⚔

Ultra-Fast Switching

Advanced SiC technology enables ultra-fast switching with minimal losses, achieving >98% efficiency in automotive and industrial applications.

12ns Turn-on 28ns Turn-off Low Losses
šŸŒ”ļø

High Temperature Operation

Operating up to 175°C junction temperature with excellent thermal management for demanding automotive and industrial environments.

175°C Tj Max AEC-Q101 Automotive Grade
šŸ”‹

Superior Power Density

Compact automotive-grade package design optimized for space-constrained applications with excellent power-to-size ratio.

Compact Design Light Weight High Integration

Product Overview

The T-SiC-M1200 represents the next generation of power semiconductor technology, leveraging Silicon Carbide's superior material properties to deliver unmatched performance in high-power applications. This module is specifically designed for automotive applications, meeting stringent AEC-Q101 qualification standards for reliability and durability.

Key Features

  • 1200V Blocking Voltage: Ideal for 800V automotive systems and industrial applications
  • Low On-Resistance: Minimizes conduction losses and heat generation
  • Fast Switching: Reduces switching losses and enables higher frequency operation
  • Robust Design: Built-in short circuit protection and avalanche ruggedness
  • Automotive Qualified: AEC-Q101 qualified for automotive applications
  • Thermal Performance: Advanced packaging for excellent thermal management

Technology Advantages

Silicon Carbide technology offers significant advantages over traditional Silicon devices:

  • Up to 10x faster switching speeds
  • 3x higher operating temperature capability
  • 50% reduction in system size and weight
  • Significantly improved efficiency (>98%)

Technical Specifications

Electrical Characteristics

Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDSS 1200 - - V VGS = 0V
Continuous Drain Current ID - 50 - A TC = 25°C
Drain-Source On-Resistance RDS(on) - 16 20 mΩ VGS = 15V, ID = 25A
Gate-Source Voltage VGS -10 - +25 V -
Turn-on Delay Time td(on) - 12 - ns VDD = 600V, ID = 25A
Turn-off Delay Time td(off) - 28 - ns VDD = 600V, ID = 25A

Thermal Characteristics

Parameter Symbol Value Unit Notes
Junction Temperature TJ -55 to +175 °C Operating range
Storage Temperature TSTG -55 to +175 °C Non-operating
Thermal Resistance (Junction to Case) RthJC 0.4 °C/W Per switch

Package Information

  • Package Type: Automotive-grade power module
  • Dimensions: 62mm x 106mm x 22mm
  • Weight: 180g (typical)
  • Terminals: Screw-type power terminals, pin header control
  • Isolation Voltage: 4000V RMS (1 minute)

Target Applications

šŸš— EV Main Inverter
šŸ”Œ EV DC-DC Converter
⚔ EV Onboard Charger
šŸ­ Industrial Motor Drives
ā˜€ļø Solar Inverters
šŸ  UPS Systems
šŸš„ Rail Traction
šŸ’Ø Wind Power Converters

Electric Vehicle Applications

The T-SiC-M1200 is specifically optimized for electric vehicle powertrains, where efficiency and power density are critical:

  • Main Traction Inverter: Converts DC battery power to AC for motor control with >98% efficiency
  • DC-DC Converter: Steps down high-voltage battery to 12V/48V auxiliary systems
  • Onboard Charger: Converts AC grid power to DC for battery charging
  • Bidirectional Converter: Enables vehicle-to-grid (V2G) functionality

Industrial Applications

Superior performance in demanding industrial environments:

  • Variable Frequency Drives: High-efficiency motor control for industrial automation
  • Renewable Energy: Solar and wind power conversion systems
  • UPS Systems: Uninterruptible power supplies for critical applications
  • Welding Equipment: High-frequency inverter welding systems

Design Considerations

  • Gate drive voltage: +15V/-5V recommended for optimal performance
  • Gate resistor: 2-10Ī© depending on switching speed requirements
  • Thermal management: Ensure adequate heatsinking for rated current
  • EMI considerations: Fast switching requires careful PCB layout

Technical Documentation

šŸ“„ Product Documentation

Access complete technical documentation for the T-SiC-M1200

šŸ”§ Design Tools

Simulation models and design assistance tools

šŸ“‹ Quality & Compliance

Certification documents and quality reports

Need Additional Support?

Our Field Application Engineers are ready to assist with your design:

  • Custom simulation models and analysis
  • Application-specific design guidance
  • Thermal management optimization
  • EMI/EMC compliance assistance
Contact FAE Team

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