T-SiC-M1200

1200V Automotive SiC MOSFET Module
Advanced Silicon Carbide MOSFET technology delivering superior switching performance, thermal management, and reliability for next-generation electric vehicle powertrains and high-frequency industrial applications.
Ultra-Fast Switching
Minimal switching losses for maximum efficiency
High Temperature
Operating up to 175°C junction temperature
Power Density
Compact design for space-constrained applications
Product Overview
The T-SiC-M1200 represents the next generation of power semiconductor technology, leveraging Silicon Carbide's superior material properties to deliver unmatched performance in high-power applications. This module is specifically designed for automotive applications, meeting stringent AEC-Q101 qualification standards for reliability and durability.
Key Features
- 1200V Blocking Voltage: Ideal for 800V automotive systems and industrial applications
- Low On-Resistance: Minimizes conduction losses and heat generation
- Fast Switching: Reduces switching losses and enables higher frequency operation
- Robust Design: Built-in short circuit protection and avalanche ruggedness
- Automotive Qualified: AEC-Q101 qualified for automotive applications
- Thermal Performance: Advanced packaging for excellent thermal management
Technology Advantages
Silicon Carbide technology offers significant advantages over traditional Silicon devices:
- Up to 10x faster switching speeds
- 3x higher operating temperature capability
- 50% reduction in system size and weight
- Significantly improved efficiency (>98%)
Technical Specifications
Electrical Characteristics
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDSS | 1200 | - | - | V | VGS = 0V |
Continuous Drain Current | ID | - | 50 | - | A | TC = 25°C |
Drain-Source On-Resistance | RDS(on) | - | 16 | 20 | mΩ | VGS = 15V, ID = 25A |
Gate-Source Voltage | VGS | -10 | - | +25 | V | - |
Turn-on Delay Time | td(on) | - | 12 | - | ns | VDD = 600V, ID = 25A |
Turn-off Delay Time | td(off) | - | 28 | - | ns | VDD = 600V, ID = 25A |
Thermal Characteristics
Parameter | Symbol | Value | Unit | Notes |
---|---|---|---|---|
Junction Temperature | TJ | -55 to +175 | °C | Operating range |
Storage Temperature | TSTG | -55 to +175 | °C | Non-operating |
Thermal Resistance (Junction to Case) | RthJC | 0.4 | °C/W | Per switch |
Package Information
- Package Type: Automotive-grade power module
- Dimensions: 62mm x 106mm x 22mm
- Weight: 180g (typical)
- Terminals: Screw-type power terminals, pin header control
- Isolation Voltage: 4000V RMS (1 minute)
Target Applications
Electric Vehicle Applications
The T-SiC-M1200 is specifically optimized for electric vehicle powertrains, where efficiency and power density are critical:
- Main Traction Inverter: Converts DC battery power to AC for motor control with >98% efficiency
- DC-DC Converter: Steps down high-voltage battery to 12V/48V auxiliary systems
- Onboard Charger: Converts AC grid power to DC for battery charging
- Bidirectional Converter: Enables vehicle-to-grid (V2G) functionality
Industrial Applications
Superior performance in demanding industrial environments:
- Variable Frequency Drives: High-efficiency motor control for industrial automation
- Renewable Energy: Solar and wind power conversion systems
- UPS Systems: Uninterruptible power supplies for critical applications
- Welding Equipment: High-frequency inverter welding systems
Design Considerations
- Gate drive voltage: +15V/-5V recommended for optimal performance
- Gate resistor: 2-10Ī© depending on switching speed requirements
- Thermal management: Ensure adequate heatsinking for rated current
- EMI considerations: Fast switching requires careful PCB layout
Technical Documentation
š Product Documentation
Access complete technical documentation for the T-SiC-M1200
š§ Design Tools
Simulation models and design assistance tools
š Quality & Compliance
Certification documents and quality reports
Need Additional Support?
Our Field Application Engineers are ready to assist with your design:
- Custom simulation models and analysis
- Application-specific design guidance
- Thermal management optimization
- EMI/EMC compliance assistance