SKU: T-SiC-M1200
CRRC Times Electric T-SiC-M1200
An automotive-qualified 1200V SiC MOSFET power module designed for high-efficiency main inverters in New Energy Vehicles (NEVs).
Product Description
The T-SiC-M1200 represents the cutting edge of power semiconductor technology for the automotive industry. It utilizes CRRC's latest generation of SiC MOSFET chips, offering extremely low Rds(on) and minimal switching losses. The module's low-inductance packaging is optimized for the fast switching speeds of SiC, ensuring clean switching waveforms and reduced EMC challenges.
Distributor's FAE Insight:
"The T-SiC-M1200 is a game-changer for 800V EV platforms. Its thermal performance is exceptional, thanks to the silver sintering die-attach process. This allows our clients to push for higher power densities or simplify their cooling systems. It's a key component in our 800V EV Main Inverter Solution."
Key Features:
- Automotive Qualified (AEC-Q101)
- Low On-Resistance (Rds(on))
- Low Switching Losses for High-Frequency Operation
- High Operating Temperature (Tj = 175°C)
- Low Parasitic Inductance Packaging
Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 1200 V |
| Continuous Drain Current (Id) @ Tc=100°C | 450 A |
| On-Resistance (Rds(on)) @ Tj=25°C | Typ. 2.5 mΩ |
| Operating Junction Temperature (Tvjop) | -40 to +175 °C |
| Package Type | Automotive Low-Inductance Module |
Primary Applications
- Electric Vehicle (EV) Main Traction Inverters
- High-Power DC-DC Converters
- On-Board Chargers (OBC)
- Heavy-Duty Vehicle Electrification