SiC Devices (Silicon Carbide)
Leverage the next generation of power semiconductor technology with CRRC Times Electric's SiC devices. These components offer superior efficiency, higher switching frequencies, and better thermal performance, making them ideal for demanding applications like electric vehicles and advanced power supplies.
SiC MOSFETs
Next-generation Silicon Carbide MOSFETs delivering superior switching performance and efficiency for automotive and industrial applications.
1 Product Available
T-SiC-M1200
1200V Automotive SiC MOSFET
SiC Schottky Diodes
Zero reverse recovery SiC Schottky Barrier Diodes with exceptional efficiency and thermal performance for high-frequency applications.
1 Product Available
T-SiCSBD-A1200
1200V / 40A SiC Schottky Diode
SiC Technology Advantages
Superior Efficiency
SiC devices offer significantly lower switching and conduction losses compared to traditional Silicon devices, enabling >98% system efficiency.
High Operating Temperature
Operating junction temperatures up to 175°C reduce cooling requirements and enable more compact system designs.
Fast Switching
Ultra-fast switching capability enables higher frequency operation, reducing passive component size and system weight.