📄 Product Datasheets

Complete electrical specifications, thermal characteristics, and mechanical drawings for all power semiconductor modules.

  • IGBT Modules: 1.2kV to 6.5kV ratings
  • SiC Modules: 1200V and 1700V SiC MOSFETs
  • Fast Recovery Diodes: High-speed switching diodes
  • Thyristor Modules: High-power control applications

📋 Application Notes

Detailed technical guides covering design considerations, best practices, and implementation guidelines.

  • Gate Driver Design: Optimal switching performance
  • Thermal Management: Heat dissipation and cooling
  • EMI Mitigation: Layout and filtering techniques
  • Parallel Operation: Multi-module configurations

📐 Design Guidelines

Comprehensive design methodologies and selection criteria for power electronics applications.

  • Module Selection: Voltage, current, and thermal ratings
  • PCB Layout: Low-inductance design practices
  • Protection Circuits: Overcurrent and overvoltage protection
  • Reliability: Life testing and qualification standards

✅ Standards & Certifications

Compliance documentation and certification information for automotive, industrial, and grid applications.

  • IEC Standards: IEC 62109, IEC 61287
  • JEDEC: JEDEC JESD22 qualification standards
  • AEC-Q101: Automotive qualification requirements
  • ISO Certifications: ISO 9001, IATF 16949

Featured IGBT Module Datasheets

T-IGBT-H3300 Series

3.3kV / 1200A - High-power rail traction IGBT module

Package: Press Pack • Applications: Rail Transit

T-IGBT-W1700 Series

1.7kV / 800A - Industrial wind power converter module

Package: Module • Applications: Wind Energy

T-IGBT-G6500 Series

6.5kV / 600A - Grid-tie high-voltage IGBT module

Package: Press Pack • Applications: Grid Infrastructure

Silicon Carbide (SiC) Documentation

T-SiC-M1200 Module Datasheet

1200V / 300A - Automotive-grade SiC power module

  • AEC-Q101 qualified for automotive applications
  • Low RDS(on) for high efficiency
  • Fast switching for reduced magnetics
  • Operating junction temperature: 175°C

SiC Schottky Barrier Diodes

T-SiCSBD-A1200 Series - Zero reverse recovery current

  • 1200V blocking voltage capability
  • Zero reverse recovery current
  • Temperature-independent switching
  • Perfect for SiC MOSFET co-packing

Application Notes & Technical Guides

AN001: IGBT Gate Driver Design Essentials

Comprehensive guide covering gate voltage, drive current, isolation, and protection circuits for optimal IGBT performance.

Updated: January 2025 • 24 Pages

AN002: SiC Module Selection Guide

Step-by-step methodology for selecting the right SiC power module based on voltage, current, switching frequency, and thermal considerations.

Updated: January 2025 • 18 Pages

AN003: Thermal Management Best Practices

Thermal design considerations, heatsink selection, thermal interface materials, and cooling system optimization.

Updated: December 2024 • 32 Pages

AN004: EMI Mitigation Techniques

Layout guidelines, filtering strategies, and shielding techniques to minimize electromagnetic interference in power electronics.

Updated: November 2024 • 28 Pages

Need a Specific Document?

Can't find the documentation you're looking for? Contact our FAE team for custom application notes and technical support.

Contact FAE Team Email: support@elec-distributor.com